SILICON CARBIDE SCHOTTKY DIODE SECRETS

Silicon carbide Schottky diode Secrets

seventy eight and 1.sixteen V. These values, derived from home temperature I–V measurements, are noted in Determine 12b. As you can see, the Schottky barrier height is determined by the amorphous layer thickness and thermal annealing length. Particularly, even though a slight influence in the amorphous layer thickness was noticed on the Schottky

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